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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4438 description high breakdown voltage- : v (br)cbo = 1500v(min) high switching speed high reliability applications ultrahigh-definition color disp lay horizontal deflection output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 6 a i cp collector current-peak 16 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4438 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 800 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 1.2a b 5.0 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 1.2a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 10 a i ces collector cutoff current v ce = 1500v; r be = 0 1.0 ma i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 8 h fe-2 dc current gain i c = 5a; v ce = 5v 4 6 switching times t stg storage time 3.0 s t f fall time i c = 5a , i b1 = 1a; i b2 = -2a; v cc = 200v 0.3 s isc website www.iscsemi.cn 2 |
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